DocumentCode
2641737
Title
GEANT4 simulations in terms of radiation hardness of commercially available SRAM
Author
Moujbani, Aymen ; Weide-Zaage, Kirsten ; Romer, Berthold ; Sabath, Frank
Author_Institution
RESRI Group, Leibniz Univ. Hannover, Hannover, Germany
fYear
2015
fDate
19-22 April 2015
Firstpage
1
Lastpage
5
Abstract
Commercial of the shelf (COTS) SRAMS were investigated by measurements and simulation in terms of radiation hardness. For the simulations the GEANT4 tool was used. With GEANT4 it is possible to determine the different particles generated by the applied energy as well as the radiation source. It was found that the single event upsets (SEU) is related to the radiation energy, technology node and react differently for the investigated SRAM. Furthermore a possible correlation between the generated particles and the SEU was found.
Keywords
SRAM chips; radiation hardening (electronics); GEANT4 tool; SRAM; radiation hardness; single event upsets; Atmospheric modeling; Conferences; Neutrons; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2015 16th International Conference on
Conference_Location
Budapest
Print_ISBN
978-1-4799-9949-1
Type
conf
DOI
10.1109/EuroSimE.2015.7103106
Filename
7103106
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