Title :
0.75 Watt and 5 Watt drivers in standard 65nm CMOS technology for high power RF applications
Author :
Acar, Mustafa ; Van der Heijden, Mark P. ; Leenaerts, Domine M W
Author_Institution :
NXP Semicond., Eindhoven, Netherlands
Abstract :
In this paper, we present two high voltage (up to 10V supply voltage), RF drivers in standard 65nm CMOS technology. The medium power (MP) driver operates from 0.5GHz to 4GHz with up to 9.6V peak-to-peak(pp) output voltage swing while driving a 3pF load capacitance. This driver consumes 0.75W dc power at 2GHz and achieves a duty-cycle control of 23% to 82% at 1GHz and 38% to 73% at 2GHz. The high power (HP) driver consumes 5W dc power at 2.14GHz while driving an RF power device (50W) with ≈30pF input capacitance. The CMOS drivers can serve as key building block for next-generation reconfigurable multiband multimode transmitters for wireless infrastructure systems, interfacing digital CMOS circuitry with high-power transistors.
Keywords :
CMOS digital integrated circuits; driver circuits; power MOSFET; power integrated circuits; radio transmitters; MP driver; PP output voltage swing; capacitance 3 pF; duty-cycle control; frequency 0.5 GHz to 4 GHz; high power RF driver application; high-power transistor; interfacing digital CMOS circuitry; medium power driver; next-generation reconfigurable multiband multimode transmitter; peak-to-peak output voltage swing; power 0.75 W; power 5 W; power 50 W; size 65 nm; standard CMOS technology; wireless infrastructure system; CMOS integrated circuits; Capacitance; Capacitors; Inverters; Logic gates; Radio frequency; Transistors; CMOS; GaN; LDMOS; extended-drain mos; high voltage; power amplifier; power driver; power transistor;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242282
