A high-dynamic range, broadband, RF transmit modulator IC

Author

Balboni, Ed ; Sam, Benjamin ; Carbonari, Daryl ; Cowles, John

Author_Institution

Analog Devices, Wilmington, MA, USA

fYear

2012

fDate

17-19 June 2012

Firstpage

315

Lastpage

318

Abstract

This paper presents a high-dynamic range broadband transmit modulator IC. The modulator includes a Voltage to current converter, active mixer core, output current to voltage converter followed by an active differential to single ended converter. A high performance LO quadrature generator is also integrated. The modulator input bandwidth exceeds 700MHz and the RF and LO can operate from 400MHz to 6GHz. At 1GHz RF out, the modulator provides a +26dBm OIP3 with -160dBm/Hz output noise. Designed in 0.35um SiGe complementary bipolar on SOI, the 1.7mm × 1.8mm IC consumes 200mA from a 5V supply.

Keywords

Ge-Si alloys; microwave integrated circuits; modulators; radio transmitters; silicon-on-insulator; LO quadrature generator; RF transmit modulator IC; SOI; SiGe; current 200 mA; frequency 400 MHz to 6 GHz; high-dynamic range broadband transmit modulator IC; single ended converter; size 0.35 mum; voltage 5 V; voltage to current converter; Amplitude modulation; Bandwidth; Baseband; Mixers; Radio frequency; Temperature measurement; Bipolar; High Linearity; Mixers; Modulator; Transmitter; Wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242289

Filename

6242289