A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS

Author

Balteanu, Andreea ; Sarkas, Ioannis ; Dacquay, Eric ; Tomkins, Alex ; Voinigescu, Sorin P.

Author_Institution

ECE Dept., Univ. of Toronto, Toronto, ON, Canada

fYear

2012

fDate

17-19 June 2012

Firstpage

319

Lastpage

322

Abstract

A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >;14.5 V_pp differential output swing, a drain efficiency of 21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at 45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.

Keywords

CMOS integrated circuits; amplitude shift keying; digital-analogue conversion; millimetre wave integrated circuits; phase shift keying; silicon-on-insulator; ASK modulation; BPSK; PAE; SOI CMOS; differential swing; efficiency 14.6 percent; efficiency 21.3 percent; frequency 45 GHz; millimetre wave DAC; size 45 nm; word length 2 bit; Binary phase shift keying; CMOS integrated circuits; Impedance matching; Power amplifiers; Power generation; Transistors; ASK; BPSK; SOI CMOS; mm-wave DAC; polar modulation; power amplifier;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE

Conference_Location

Montreal, QC

ISSN

1529-2517

Print_ISBN

978-1-4673-0413-9

Electronic_ISBN

1529-2517

Type

conf

DOI

10.1109/RFIC.2012.6242290

Filename

6242290