Title :
A 45-GHz, 2-bit power DAC with 24.3 dBm output power, >14 Vpp differential swing, and 22% peak PAE in 45-nm SOI CMOS
Author :
Balteanu, Andreea ; Sarkas, Ioannis ; Dacquay, Eric ; Tomkins, Alex ; Voinigescu, Sorin P.
Author_Institution :
ECE Dept., Univ. of Toronto, Toronto, ON, Canada
Abstract :
A novel high efficiency, large output-power, 2-bit tuned mm-wave DAC realized in 45-nm SOI CMOS is demonstrated. A record breaking 24.3 dBm output power is achieved at 45 GHz with 18.3 dB saturated gain, >;14.5 Vpp differential output swing, a drain efficiency of 21.3% and 14.6% PAE. The best PAE is 22% at an output power of 23.5 dBm. Operation at 45 GHz with up to 2.5 Gbps BPSK and up to 1.25 Gbps ASK modulation is shown.
Keywords :
CMOS integrated circuits; amplitude shift keying; digital-analogue conversion; millimetre wave integrated circuits; phase shift keying; silicon-on-insulator; ASK modulation; BPSK; PAE; SOI CMOS; differential swing; efficiency 14.6 percent; efficiency 21.3 percent; frequency 45 GHz; millimetre wave DAC; size 45 nm; word length 2 bit; Binary phase shift keying; CMOS integrated circuits; Impedance matching; Power amplifiers; Power generation; Transistors; ASK; BPSK; SOI CMOS; mm-wave DAC; polar modulation; power amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242290
