DocumentCode
2642242
Title
A 200 mA low-area, low-noise, low-dropout linear regulator for monolithic active pixel sensors
Author
Wang, Jia ; Gao, Deyuan ; Zheng, Ran ; Hu, Christine ; Hu, Yann
Author_Institution
Sch. of Comput. Sci. & Technol., Northwestern Polytech. Univ., Xi´´an, China
fYear
2011
fDate
21-23 June 2011
Firstpage
2693
Lastpage
2697
Abstract
To meet the low-material and low-noise requirements, the power supply of the monolithic active pixel sensors must be improved. This paper presents a built-in low-dropout (LDO) linear regulator to internally supply the analog power. A novel compensation strategy is proposed. Since a series RC network and an adaptively biased buffer are utilized, the location of the poles and zeros vary with that of the output pole. Employing one relative small compensation capacitor, the regulator is stable in the full range of load current. The regulator is designed and simulated in a standard 0.35 μm CMOS process. The chip area is 239 μm × 168 μm. The maximum load current of 200 mA can be obtained. The output spectral noise densities are 320 nV/ V Hz and 110 nV/ V Hz at 100 Hz and 1 kHz, respectively.
Keywords
CMOS analogue integrated circuits; control system synthesis; sensors; voltage regulators; CMOS process; RC network; built-in LDO linear regulator; built-in low-dropout linear regulator; current 200 mA; low-dropout linear regulator; monolithic active pixel sensors; size 0.35 mum; Capacitors; Circuit stability; Noise; Poles and zeros; Regulators; Stability analysis; Transistors; LDO; compensation strategy; monolithic active pixel sensors; phase margin;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics and Applications (ICIEA), 2011 6th IEEE Conference on
Conference_Location
Beijing
ISSN
pending
Print_ISBN
978-1-4244-8754-7
Electronic_ISBN
pending
Type
conf
DOI
10.1109/ICIEA.2011.5976052
Filename
5976052
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