Title :
Millimeter-wave characterization of Si/SiGe HBTs noise parameters featuring fT/fMAX of 310/400 GHz
Author :
Quémerais, T. ; Gloria, D. ; Jan, S. ; Derrier, N. ; Chevalier, P.
Author_Institution :
Technol. R&D, STMicroelectron., Crolles, France
Abstract :
High frequency noise parameters (NFmin, Rn, Bopt and Gopt) determination of Si/SiGe HBTs from STMicroelectronics B5T technology are provided for the first time in the millimeter-wave range. In this paper, an integrated tuner is used for the extraction of high frequencies noise parameters with the multi-impedance method. The designed tuner is composed an active part with a low noise amplifier (LNA) and a passive part with a high performances travelling wave digitally tunable capacitance (DTC), both in series with a transmission line design for phase shifting. Measurements exhibit a state of the art NFmin lower than 2 dB at 68 GHz for the HBT.
Keywords :
Ge-Si alloys; circuit tuning; heterojunction bipolar transistors; low noise amplifiers; millimetre wave bipolar transistors; phase shifters; silicon; HBT noise parameter; LNA; STMicroelectronics B5T technology; frequency 310 GHz; frequency 400 GHz; frequency 68 GHz; high-frequency noise parameters; high-performance travelling wave digitally-tunable capacitance; integrated tuner; low-noise amplifier; millimeter-wave characterization; multiimpedance method; phase shifting; transmission line design; Noise; Noise measurement; Optimized production technology; Silicon; Transistors; Transmission line measurements; Tuners; HF noise measurement; Heterojunction bipolar transistor; impedance tuner; in-situ lab; low noise amplifier;
Conference_Titel :
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location :
Montreal, QC
Print_ISBN :
978-1-4673-0413-9
Electronic_ISBN :
1529-2517
DOI :
10.1109/RFIC.2012.6242297
