DocumentCode
2642628
Title
An improved VBIC model for InP DHBTs
Author
Shi, Yuxia ; Jin, Zhi ; Su, Yongbo ; Cao, Yuxiong ; Wang, Yan
Author_Institution
Inst. of Microelectron., Tsinghua Univ., Beijing, China
fYear
2012
fDate
17-19 June 2012
Firstpage
409
Lastpage
412
Abstract
An emprical model is established for InP/InGaAs DHBTs based on the VBIC model. The heterojunction barrier and current blocking effect are considered in the current expressions. And new empirical models for transit time and collector capacitance are proposed by considering the voltage and current dependence. The excellent fitting results show that the improved model has better accuracy than the conventional VBIC model.
Keywords
gallium arsenide; heterojunction bipolar transistors; indium compounds; semiconductor device models; DHBT; InP-InGaAs; collector capacitance; current blocking effect; emprical model; heterojunction barrier; improved VBIC model; transit time; Current measurement; Double heterojunction bipolar transistors; Heterojunctions; Indium gallium arsenide; Indium phosphide; Integrated circuit modeling; Mathematical model; InP/InGaAs DHBT; VBIC model; empirical model; heterojunction effect;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits Symposium (RFIC), 2012 IEEE
Conference_Location
Montreal, QC
ISSN
1529-2517
Print_ISBN
978-1-4673-0413-9
Electronic_ISBN
1529-2517
Type
conf
DOI
10.1109/RFIC.2012.6242310
Filename
6242310
Link To Document