DocumentCode
2642779
Title
Reduction Of Residual Oxygen Incorporation In High-power Single Quantum Well Lasers Grown By Molecular Beam Epitaxy
Author
Ovadia, Shlomo ; Meier, H.P. ; Iyer, Sridhar V. ; Parks, C.
Author_Institution
IBM East Fishkill Facility
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
35
Lastpage
36
Keywords
Electrons; Gallium arsenide; Instruments; Laser theory; Oxygen; Quantum well lasers; Semiconductor lasers; Superlattices; Temperature; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638933
Filename
638933
Link To Document