Title :
FDTD analysis of distributed amplifiers based on the fully distributed model
Author :
Mirzavand, R. ; Abdipour, A. ; Shishegar, A.A.
Author_Institution :
E.E. Dept., Amirkabir Univ. of Technol., Tehran
Abstract :
In this paper a wave approach has been introduced to study the performance of a distributed amplifier. The time domain response of a FET is obtained by means of the fully distributed model. By applying the procedure to a pi-gate GaAs MESFET, the S matrix is computed from time domain results over a frequency range of 2-20 GHz. Scattering parameters of gate and drain lines are extracted from three-dimensional FDTD simulation. The result obtained by this wave approach is compared with device lumped model and Quasi static approach of transmission line.
Keywords :
S-matrix theory; Schottky gate field effect transistors; finite difference time-domain analysis; gallium arsenide; travelling wave amplifiers; 3D FDTD simulation; FDTD analysis; GaAs; MESFET; S matrix; distributed amplifiers; frequency 2 GHz to 20 GHz; scattering parameters; time domain response; transmission line; Computational modeling; Distributed amplifiers; FETs; Finite difference methods; Frequency; Gallium arsenide; MESFETs; Scattering parameters; Time domain analysis; Transmission line matrix methods; Finite-Difference Time-Domain; MESFET; distributed amplifier; distributed model; scattering parameter;
Conference_Titel :
Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on
Conference_Location :
Melaka
Print_ISBN :
978-1-4244-1434-5
Electronic_ISBN :
978-1-4244-1435-2
DOI :
10.1109/APACE.2007.4603907
