Title :
Intrinsic fluctuations in Vertical NAND flash memories
Author :
Nowak, Etienne ; Kim, Jae-Ho ; Kwon, HyeYoung ; Kim, Young-Gu ; Sim, Jae Sung ; Lim, Seung-Hyun ; Kim, Dae Sin ; Lee, Keun-Ho ; Park, Young-Kwan ; Choi, Jeong-Hyuk ; Chung, Chilhee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Hwasung, South Korea
Abstract :
Vertical NAND (VNAND) technology relies on polysilicon for channel material. Two intrinsic variation sources of the cell threshold voltage induced by polysilicon traps have been identified and simulated: Random Trap Fluctuation (RTF) and Random Telegraph Noise (RTN). We demonstrate that RTN is enhanced by the polysilicon material and an original model explains the asymmetric RTN distribution observed after endurance. This work enables the prediction of VT distribution for VNAND devices in MLC operation.
Keywords :
flash memories; integrated circuit noise; asymmetric RTN distribution; cell threshold voltage; channel material; intrinsic fluctuations; intrinsic variation sources; polysilicon material; polysilicon traps; random telegraph noise; random trap fluctuation; vertical NAND flash memories; Energy states; Fluctuations; Pulse measurements; Silicon; Threshold voltage; Very large scale integration; Voltage measurement; 3D; Flash; NAND; Polysilicon Channel; Random Telegraph Noise; Random Trap Fluctuation; Vertical NAND;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242441
