• DocumentCode
    2643610
  • Title

    A new GIDL phenomenon by field effect of neighboring cell transistors and its control solutions in sub-30 nm NAND flash devices

  • Author

    Park, Il Han ; Hahn, Wook-Ghee ; Song, Ki-Whan ; Choi, Ki Hwan ; Choi, Hyun-Ki ; Lee, Sung Bok ; Lee, Chang-Sub ; Song, Jai Hyuk ; Han, Jin Man ; Kyoung, Kye Hyun ; Jun, Young-Hyun

  • Author_Institution
    Samsung Electron. Co., Ltd., Hwasung, South Korea
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    23
  • Lastpage
    24
  • Abstract
    We present a new field effect mechanism on IGIDL in NAND flash strings. According to the proposed 5-terminal GIDL model, special care should be taken to optimize the biasing levels of inhibit scheme. Suggested incremental biasing scheme can be one of the solutions for reducing critical field that enhances boosting efficiency and maximizes memory yields.
  • Keywords
    field effect transistors; flash memories; 5-terminal GIDL model; GIDL phenomenon; NAND flash devices; NAND flash strings; field effect; neighboring cell transistors; Boosting; Current measurement; Flash memory; Junctions; Logic gates; Programming; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242442
  • Filename
    6242442
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2643610