Large-scale (512kbit) integration of multilayer-ready access-devices based on mixed-ionic-electronic-conduction (MIEC) at 100% yield

Author

Burr, G.W. ; Virwani, K. ; Shenoy, R.S. ; Padilla, A. ; BrightSky, M. ; Joseph, E.A. ; Lofaro, M. ; Kellock, A.J. ; King, R.S. ; Nguyen, K. ; Bowers, A.N. ; Jurich, M. ; Rettner, C.T. ; Jackson, B. ; Bethune, D.S. ; Shelby, R.M. ; Topuria, T. ; Arellano,

Author_Institution

Almaden Res. Center, IBM, San Jose, CA, USA

fYear

2012

fDate

12-14 June 2012

Firstpage

41

Lastpage

42

Abstract

BEOL-friendly Access Devices (AD) based on Cu-containing MIEC materials [1-4] are integrated in large (512 × 1024) arrays at 100% yield, and are successfully co-integrated together with Phase Change Memory (PCM). Numerous desirable attributes are demonstrated: the large currents (>;200μA) needed for PCM, the bipolar operation required for high-performance RRAM, the single-target sputter deposition essential for high-volume manufacturing, and the ultra-low leakage ( 10 pA) and high voltage margin (1.5V) needed to enable large crosspoint arrays.

Keywords

phase change memories; sputter deposition; BEOL-friendly access devices; MIEC materials; bipolar operation; high voltage margin; high-performance RRAM; high-volume manufacturing; large-scale integration; mixed-ionic-electronic-conduction; multilayer-ready access-devices; phase change memory; single-target sputter deposition; storage capacity 512 Kbit; ultra-low leakage; Annealing; Electrodes; Nonvolatile memory; Phase change materials; Very large scale integration; Voltage measurement; Wiring; Access device; MIEC; MRAM; NVM; PCM; RRAM;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242451

Filename

6242451