• DocumentCode
    2644040
  • Title

    Conductive filament scaling of TaOx bipolar ReRAM for long retention with low current operation

  • Author

    Ninomiya, T. ; Takagi, T. ; Wei, Z. ; Muraoka, S. ; Yasuhara, R. ; Katayama, K. ; Ikeda, Y. ; Kawai, K. ; Kato, Y. ; Kawashima, Y. ; Ito, S. ; Mikawa, T. ; Shimakawa, K. ; Aono, K.

  • Author_Institution
    Device Module Dev. Center, Panasonic Corp., Kyoto, Japan
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    73
  • Lastpage
    74
  • Abstract
    We demonstrate for the first time that the density of oxygen vacancy in a conductive filament plays a key role in ensuring data retention. We achieve very good retention results up to 100 hours at 150°C even under the low current operation due to the scaling of conductive filament size while retaining sufficiently high density of oxygen vacancy.
  • Keywords
    conducting materials; random-access storage; tantalum compounds; TaOx; bipolar ReRAM; conductive filament scaling; oxygen vacancy density; resistive random-access memory; temperature 150 degC; Arrays; Electric breakdown; Equations; Indium tin oxide; Mathematical model; Resistance; Very large scale integration;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242467
  • Filename
    6242467
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644040