• DocumentCode
    2644052
  • Title

    Dynamic ‘hour glass’ model for SET and RESET in HfO2 RRAM

  • Author

    Degraeve, R. ; Fantini, A. ; Clima, S. ; Govoreanu, B. ; Goux, L. ; Chen, Y.Y. ; Wouters, D.J. ; Roussel, Ph ; Kar, G.S. ; Pourtois, G. ; Cosemans, S. ; Kittl, J.A. ; Groeseneken, G. ; Jurczak, M. ; Altimime, L.

  • Author_Institution
    IMEC, Leuven, Belgium
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    75
  • Lastpage
    76
  • Abstract
    An analytic dynamic hour glass model for HfO2 RRAM is demonstrated, describing the reset as a dynamic equilibrium process and the set as a constriction growth limited by ion mobility and current compliance. The dependence on time, voltage and forming conditions is in good constriction growth agreement with experiments. Since the model is fully analytical, it can be implemented in a circuit simulator.
  • Keywords
    hafnium compounds; ion mobility; random-access storage; HfO2; RESET; RRAM; SET; circuit simulator; constriction growth; current compliance; dynamic equilibrium process; dynamic hour glass model; ion mobility; Glass; Hafnium compounds; Mobile communication; Predictive models; Tin; Transient analysis;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242468
  • Filename
    6242468
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644052