Title :
Pulsed and CW Double-Drift Silicon IMPATTs
Author :
Pfund, G. ; Snapp, C. ; Podell, A.
Abstract :
The properties of double-drift Si IMPATTs designed for both pulsed and CW operation at frequencies between 8 and 18 GHz are discussed. Peak pulse powers greater than 18 watts at 10 GHz and 13.5 watts at 16.5 GHz were obtained for 800 nsec pulses at a 25% duty cycle with the junction temperature rise limited to 200/spl deg/C. For a similar temperature rise a CW power of 3.4 watts at 11.5 GHz was achieved. Conversion efficiencies were between 10.5 and 13.7%.
Keywords :
Breakdown voltage; Capacitance; Diodes; Frequency; Impedance; Pulse amplifiers; Pulse transformers; Silicon; Space vector pulse width modulation; Temperature;
Conference_Titel :
Microwave Symposium Digest, 1974 S-MTT International
Conference_Location :
Atlanta, Georgia, USA
DOI :
10.1109/MWSYM.1974.1123585
