• DocumentCode
    2644109
  • Title

    Tunable Millimeter-Wave Packaged IMPATT Diode Oscillators

  • Author

    Weller, K.P. ; English, D.L. ; Kuno, H.J.

  • Volume
    74
  • Issue
    1
  • fYear
    1974
  • fDate
    12-14 June 1974
  • Firstpage
    320
  • Lastpage
    322
  • Abstract
    Broadband mechanically tunable V-band (50-75 GHz) and W-band (75-110 GHz) IMPATT oscillators have been developed using packaged silicon p+n junction diodes. A tuning bandwidth of 20% with minimum output of over 50 mW is obtained in V-band and 6% bandwidth with minimum output over 25 mW is obtained in W-band. Higher power but more limited tuning bandwidth results from using other diode structures.
  • Keywords
    Bandwidth; Circuit optimization; Copper; Diodes; Frequency; Microwave oscillators; Packaging; Silicon; Tunable circuits and devices; Tuning;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1974 S-MTT International
  • Conference_Location
    Atlanta, Georgia, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1974.1123588
  • Filename
    1123588
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644109