3D simulation and measurements of free space characterization for silicon wafers at K-band

Author

Baba, Noor Hasimah ; Khalid, Muhammad ; Awang, Robiatun Adayiah

Author_Institution

Fac. of Electr. Eng., Technol. Mara Shah Alam Univ., Shah Alam

fYear

2007

fDate

4-6 Dec. 2007

Firstpage

1

Lastpage

5

Abstract

This paper describes the 3D simulation and measurements of free space characterization for the complex permittivity of p-type and n-type doped silicon wafers at K-band. The component of this free space measurement system (FSMM) consists of Millitech series GOA Gaussian optics lens antennas, vector network analyzer (VNA) and a high performance workstation. The antennas were modeled and simulated using Computer Simulation Technology (CST) software. The thru, reflect and line (TRL) calibration technique were used to eliminate the effect of undesirable multiple reflections. The simulation and measurement results are presented where good agreements are observed.

Keywords

MMIC; electrical engineering computing; integrated circuit measurement; lens antennas; microwave measurement; nondestructive testing; permittivity measurement; 3D simulation; CST; FSMM; GOA; Millitech series Gaussian optics lens antennas; Si; VNA; computer simulation technology software; free space characterization; free space measurement system; n-type doped silicon wafers; p-type doped silicon wafers; reflect-line calibration technique; vector network analyzer; Antenna measurements; Computational modeling; Computer simulation; Extraterrestrial measurements; K-band; Lenses; Optical devices; Optical fiber networks; Permittivity measurement; Silicon; 3D simulation; FSMM; K-band; complex permittivity; doped silicon wafer;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Electromagnetics, 2007. APACE 2007. Asia-Pacific Conference on

Conference_Location

Melaka

Print_ISBN

978-1-4244-1434-5

Electronic_ISBN

978-1-4244-1435-2

Type

conf

DOI

10.1109/APACE.2007.4603979

Filename

4603979