Towards high performance Ge1−xSnx and In0.7Ga0.3As CMOS: A novel common gate stack featuring sub-400 °C Si2H6 passivation, single TaN metal gate, and sub-1.3 nm EOT

We report a novel common gate stack solution for Ge_1-xSn_x P-MOSFET and In_0.7Ga_0.3As N-MOSFET, featuring sub-400°C Si₂H₆ passivation, sub-1.3 nm EOT, and single TaN metal gate. Symmetric V_TH, high performance, low gate leakage, negligible hysteresis, and excellent reliability were realized. Using this gate stack, the world´s first GeSn short-channel device with gate length L_G down to 250 nm was realized. Drive current of more than 1000 μA/μm was achieved, with peak intrinsic transconductance of ~465 μS/μm at V_DS of -1.1 V.