• DocumentCode
    2644380
  • Title

    Complementary X-Band TRAPATT Diodes

  • Author

    Fong, T.T. ; Ying, R.S.

  • Volume
    74
  • Issue
    1
  • fYear
    1974
  • fDate
    12-14 June 1974
  • Firstpage
    365
  • Lastpage
    366
  • Abstract
    X-band n+p TRAPATT diodes have been fabricated and have shown better performance than their p+n complement. The low threshold power densities required to achieve the high efficiency oscillation have greatly enhanced their high duty and CW operation. The fabrication techniques for these high frequency devices and their performance in both pulsed and CW modes will be discussed.
  • Keywords
    Copper; Diodes; Electron traps; Fabrication; Frequency; Heat sinks; Packaging; Plasma applications; Substrates; Thermal resistance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium Digest, 1974 S-MTT International
  • Conference_Location
    Atlanta, Georgia, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1974.1123605
  • Filename
    1123605
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644380