• DocumentCode
    2644413
  • Title

    Graphene interconnect lifetime under high current stress

  • Author

    Chen, Xiangyu ; Seo, David H. ; Seo, Sunae ; Chung, Hyunjong ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    121
  • Lastpage
    122
  • Abstract
    Lifetime of multi-layer graphene interconnects under constant current stress is studied for the first time. Under a stress current density of 20MA/cm2 at 250°C exposed to air, Mean-Time-To-Fail (MTTF) of uncapped CVD graphene wire is about 6 hours. It is shown that lifetime is mainly limited by defect formation due to graphene oxidation.
  • Keywords
    chemical vapour deposition; graphene; integrated circuit interconnections; integrated circuit reliability; oxidation; MTTF; graphene oxidation; high-current stress; mean-time-to-fail; multilayer graphene interconnect lifetime; stress current density; temperature 250 degC; uncapped CVD graphene wire; Conductivity; Current density; Electric breakdown; Materials; Resistance; Stress; Wires;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242491
  • Filename
    6242491
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644413