Title :
Graphene interconnect lifetime under high current stress
Author :
Chen, Xiangyu ; Seo, David H. ; Seo, Sunae ; Chung, Hyunjong ; Wong, H. -S Philip
Author_Institution :
Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
Abstract :
Lifetime of multi-layer graphene interconnects under constant current stress is studied for the first time. Under a stress current density of 20MA/cm2 at 250°C exposed to air, Mean-Time-To-Fail (MTTF) of uncapped CVD graphene wire is about 6 hours. It is shown that lifetime is mainly limited by defect formation due to graphene oxidation.
Keywords :
chemical vapour deposition; graphene; integrated circuit interconnections; integrated circuit reliability; oxidation; MTTF; graphene oxidation; high-current stress; mean-time-to-fail; multilayer graphene interconnect lifetime; stress current density; temperature 250 degC; uncapped CVD graphene wire; Conductivity; Current density; Electric breakdown; Materials; Resistance; Stress; Wires;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242491
