Comprehensive investigations on neutral and attractive traps in random telegraph signal noise phenomena using (100)- and (110)-orientated CMOSFETs

Neutral traps and attractive traps in random telegraph noise (RTN), on both (100)- and (110)-orientated CMOSFETs, are well distinguished and systematically studied for the first time, including both electron and hole traps. It is found that neutral traps energy distributions are higher than attractive traps and, most importantly, neutral traps caused much larger threshold voltage shifts (ΔV_{th_RTN}) than attractive traps do, especially in (110)-nMOSFETs. Furthermore, based on obtained ΔV_{th_RTN} in CMOSFETs on surface of various orientations, 3D structure optimizations are discussed in view of ΔV_{th_RTN} suppression.