DocumentCode :
2644657
Title :
Designing in scaled technologies: 32 nm and beyond
Author :
Kosonocky, Stephen ; Burd, Tom ; Kasprak, Keith ; Schultz, Rich ; Stephany, Ray
Author_Institution :
Adv. Micro Devices, Inc., Fort Collins, CO, USA
fYear :
2012
fDate :
12-14 June 2012
Firstpage :
147
Lastpage :
148
Abstract :
VLSI technology scaling in the 32-nm node and beyond has presented designers with increasing challenges to obtain performance gains, power and area reductions each successive generation. Maximum voltage limits, decreasing interconnect performance, and device changes have forced designers to rethink system and circuit design for enhanced system performance and improved user experience.
Keywords :
VLSI; integrated circuit design; nanotechnology; VLSI technology scaling; circuit design; maximum voltage limits; size 32 nm; successive generation; CMOS integrated circuits; Logic gates; Metals; Performance evaluation; Random access memory; Reliability; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
ISSN :
0743-1562
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
Type :
conf
DOI :
10.1109/VLSIT.2012.6242504
Filename :
6242504
Link To Document :
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