DocumentCode
2644657
Title
Designing in scaled technologies: 32 nm and beyond
Author
Kosonocky, Stephen ; Burd, Tom ; Kasprak, Keith ; Schultz, Rich ; Stephany, Ray
Author_Institution
Adv. Micro Devices, Inc., Fort Collins, CO, USA
fYear
2012
fDate
12-14 June 2012
Firstpage
147
Lastpage
148
Abstract
VLSI technology scaling in the 32-nm node and beyond has presented designers with increasing challenges to obtain performance gains, power and area reductions each successive generation. Maximum voltage limits, decreasing interconnect performance, and device changes have forced designers to rethink system and circuit design for enhanced system performance and improved user experience.
Keywords
VLSI; integrated circuit design; nanotechnology; VLSI technology scaling; circuit design; maximum voltage limits; size 32 nm; successive generation; CMOS integrated circuits; Logic gates; Metals; Performance evaluation; Random access memory; Reliability; Very large scale integration;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location
Honolulu, HI
ISSN
0743-1562
Print_ISBN
978-1-4673-0846-5
Electronic_ISBN
0743-1562
Type
conf
DOI
10.1109/VLSIT.2012.6242504
Filename
6242504
Link To Document