DocumentCode
2644659
Title
Very Smooth AiGaAs/GaAs Quantum-wells Grown By Metalorganic Chemical Vapor Disposition
Author
Dupuis, Russell D. ; Neff, James G. ; Pinzone, Christopher J.
Author_Institution
NSF Science & Technology Research Center
fYear
1991
fDate
29 Jul-2 Aug 1991
Firstpage
53
Lastpage
54
Keywords
Chemicals; Epitaxial growth; Gallium arsenide; MOCVD; Microelectronics; Molecular beam epitaxial growth; Quantum well devices; Quantum wells; Substrates; Temperature distribution;
fLanguage
English
Publisher
ieee
Conference_Titel
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN
0-87942-618-7
Type
conf
DOI
10.1109/LEOSST.1991.638944
Filename
638944
Link To Document