Integration of 4F2 selector-less crossbar array 2Mb ReRAM based on transition metal oxides for high density memory applications

Author

Lee, Hyung Dong ; Kim, S.G. ; Cho, K. ; Hwang, H. ; Choi, H. ; Lee, J. ; Lee, S.H. ; Lee, H.J. ; Suh, J. ; Chung, S. -O ; Kim, Y.S. ; Kim, K.S. ; Nam, W.S. ; Cheong, J.T. ; Kim, J.T. ; Chae, S. ; Hwang, E. -R ; Park, S.N. ; Sohn, Y.S. ; Lee, C.G. ; Shin,

Author_Institution

R&D Div., Hynix Semicond. Inc., Icheon, South Korea

fYear

2012

fDate

12-14 June 2012

Firstpage

151

Lastpage

152

Abstract

4F² selector-less crossbar array 2Mb ReRAM test chip with 54nm technology has been successfully integrated for high cell efficiency and high density memory applications by implementing parts of decoders to row/column lines directly under the cell area. Read/write specifications for memory operation in a chip are presented by minimizing sneak current through unselected cells. The characteristics of memory cell (nonlinearity, Kw >;8, Iop <;10uA, Vop<;60;3V), TiOx/Ta₂O₅, are modified for its working in a chip by adopting appropriate materials for a resistor stack and spacer. Write condition in a chip makes a critical impact on read margin and read/write operation in a chip has been verified.

Keywords

microprocessor chips; random-access storage; resistors; tantalum compounds; titanium compounds; write-once storage; 4F2 selector-less crossbar array; ReRAM test chip; TiO_x-Ta₂O₅; high density memory; memory cell; read/write specifications; resistor spacer; resistor stack; row/column lines; size 54 nm; storage capacity 2 Mbit; transition metal oxides; Arrays; Decoding; Materials; Resistance; Resistors; Switches; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242506

Filename

6242506