Title :
Ultrathin (<10nm) Nb2O5/NbO2 hybrid memory with both memory and selector characteristics for high density 3D vertically stackable RRAM applications
Author :
Kim, Seonghyun ; Liu, Xinjun ; Park, Jubong ; Jung, Seungjae ; Lee, Wootae ; Woo, Jiyong ; Shin, Jungho ; Choi, Godeuni ; Cho, Chumhum ; Park, Sangsu ; Lee, Daeseok ; Cha, Eui-jun ; Lee, Byoung-Hun ; Lee, Hyung Dong ; Kim, Soo Gil ; Chung, Suock ; Hwang,
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Abstract :
We report, for the first time, the novel concept of ultrathin (~10nm) W/NbOx/Pt device with both threshold switching (TS) and memory switching (MS) characteristics. Excellent TS characteristics of NbO2, such as high temperature stability (~160°C), fast switching speed (~22ns), good switching uniformity, and extreme scalability of device area (φ~10nm)/thickness (~10nm) were obtained. By oxidizing NbO2, we can form ultrathin Nb2O5/NbO2 stack layer for hybrid memory devices with both TS and MS. Without additional selector device, 1Kb cross-point hybrid memory device without SET/RESET disturbance up to 106 cycles was demonstrated.
Keywords :
hybrid integrated circuits; niobium compounds; random-access storage; tungsten compounds; 3D vertically stackable RRAM application; Nb2O5-NbO2; W-NbOx-Pt; cross-point hybrid memory device; extreme scalability; memory characteristics; memory size 1 KByte; memory switching characteristics; selector characteristics; switching speed; switching uniformity; temperature stability; threshold switching characteristics; ultrathin hybrid memory; Films; Optical switches; Scalability; Temperature; Temperature measurement; Thermal stability;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242508
