• DocumentCode
    2644775
  • Title

    Process-improved RRAM cell performance and reliability and paving the way for manufacturability and scalability for high density memory application

  • Author

    Kar, G.S. ; Fantini, A. ; Chen, Y.-Y. ; Paraschiv, V. ; Govoreanu, B. ; Hody, H. ; Jossart, N. ; Tielens, H. ; Brus, S. ; Richard, O. ; Vandeweyer, T. ; Wouters, D.J. ; Altimime, L. ; Jurczak, M.

  • Author_Institution
    Imec, Leuven, Belgium
  • fYear
    2012
  • fDate
    12-14 June 2012
  • Firstpage
    157
  • Lastpage
    158
  • Abstract
    Here for the first time we discuss RRAM cell performance and reliability through process improvement. Excellent post-cycling (106) retention and post-bake retention and endurance have been achieved for the optimized process conditions. The optimized RRAM cells show potential for manufacturability and scalability for high density memory application.
  • Keywords
    CMOS memory circuits; etching; hafnium; hafnium compounds; integrated circuit reliability; random-access storage; titanium compounds; RRAM reliability; TiN-Hf-HfO2-TiN; high density memory application; post bake retention; post cycling retention; process improved RRAM cell performance; Encapsulation; Hafnium compounds; Oxidation; Reliability; Silicon compounds; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    VLSI Technology (VLSIT), 2012 Symposium on
  • Conference_Location
    Honolulu, HI
  • ISSN
    0743-1562
  • Print_ISBN
    978-1-4673-0846-5
  • Electronic_ISBN
    0743-1562
  • Type

    conf

  • DOI
    10.1109/VLSIT.2012.6242509
  • Filename
    6242509
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2644775