Author :
Goux, L. ; Fantini, A. ; Kar, G. ; Chen, Y. -Y ; Jossart, N. ; Degraeve, R. ; Clima, S. ; Govoreanu, B. ; Lorenzo, G. ; Pourtois, G. ; Wouters, D.J. ; Kittl, J.A. ; Altimime, L. ; Jurczak, M.
Abstract :
We demonstrate sub-500nA switching and tunable set voltage by inserting thin Al2O3 layer in TiNHfO2HfTiN RRAM cell. Stack engineering clearly led to novel insights into the switching phenomenology: (i) O-scavenging is key in the forming process and stack-asymmetry management; (ii) dielectric-stack thinning allows lower forming current; (iii) `natural´ (asymmetry-induced) reset switching takes place close to the TiN anode; (iv) reset resistance is limited by material-barrier properties at TiN interface.
Keywords :
alumina; bipolar memory circuits; hafnium compounds; random-access storage; titanium compounds; TiN-Al2O3-HfO2-Hf-TiN; anode; asymmetry-induced reset switching; dielectric-stack thinning; forming process; high-performance bipolar RRAM cell; material-barrier properties; stack-asymmetry management; stack-engineering; tunable set voltage; ultralow operating current bipolar RRAM cell; Aluminum oxide; Hafnium compounds; Resistance; Switches; Tin; Tuning;
