Title :
85nm-wide 1.5mA/µm-ION IFQW SiGe-pFET: Raised vs embedded Si0.75Ge0.25 S/D benchmarking and in-depth hole transport study
Author :
Mitard, J. ; Witters, L. ; Eneman, G. ; Hellings, G. ; Pantisano, L. ; Hikavyy, A. ; Loo, R. ; Eyben, P. ; Horiguchi, N. ; Thean, A.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
Beside the VTH-tunability, a raised SiGe S/D module offers higher LG-scalability than an embedded SiGe S/D in SiGe-IFQW pFETs. In-depth transport study of record performing 1.5mA/μm-ION strained-SiGe IFQW pFETs reveals that mobility improvement is still the key performance booster whereas LG-scaling has limited impact.
Keywords :
Ge-Si alloys; MOSFET; IFQW-pFET; S-D module; Si0.75Ge0.25; current 1.5 mA; embedded S-D benchmarking; in-depth hole transport study; in-depth transport study; key performance booster; size 85 nm; Benchmark testing; Electrostatics; Junctions; Logic gates; Performance evaluation; Silicon; Silicon germanium;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242512
