InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax

Author

Kim, T.-W. ; Hill, R.J.W. ; Young, C.D. ; Veksler, D. ; Morassi, L. ; Oktybrshky, S. ; Oh, J. ; Kang, C.Y. ; Kim, D. -H ; Alamo, J. A del ; Hobbs, C. ; Kirsch, P.D. ; Jammy, R.

Author_Institution

SEMATECH, Albany, NY, USA

fYear

2012

fDate

12-14 June 2012

Firstpage

179

Lastpage

180

Abstract

This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (g_m,max = 1.73 mS/μm) and high-frequency performance (f_T = 245 GHz and f_max = 355 GHz) at L_g = 100 nm. This record performance is achieved by using a low D_it composite Al₂O₃/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In_1-xGa_xAs to InAs with similar processing and generalized characterization, including D_it.

Keywords

III-V semiconductors; MOSFET; alumina; gallium arsenide; indium compounds; quantum well devices; Al₂O₃-InP; III-V material pathway; In_1-xGa_xAs; QW; frequency 245 GHz; frequency 355 GHz; generalized characterization; high mobility channel; high-frequency performance; low composite gate stack; optimized layer design; quantum-well MOSFET; record transconductance; size 100 nm; Aluminum oxide; Indium phosphide; Logic gates; MOSFET circuits; Resistance; Silicon; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology (VLSIT), 2012 Symposium on

Conference_Location

Honolulu, HI

ISSN

0743-1562

Print_ISBN

978-1-4673-0846-5

Electronic_ISBN

0743-1562

Type

conf

DOI

10.1109/VLSIT.2012.6242520

Filename

6242520