Title :
InAs quantum-well MOSFET (Lg = 100 nm) with record high gm, fT and fmax
Author :
Kim, T.-W. ; Hill, R.J.W. ; Young, C.D. ; Veksler, D. ; Morassi, L. ; Oktybrshky, S. ; Oh, J. ; Kang, C.Y. ; Kim, D. -H ; Alamo, J. A del ; Hobbs, C. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
This paper reports InAs quantum-well (QW) MOSFETs with record transconductance (gm,max = 1.73 mS/μm) and high-frequency performance (fT = 245 GHz and fmax = 355 GHz) at Lg = 100 nm. This record performance is achieved by using a low Dit composite Al2O3/InP gate stack, optimized layer design and a high mobility InAs channel. This work is significant because it shows a possible III-V material pathway from In1-xGaxAs to InAs with similar processing and generalized characterization, including Dit.
Keywords :
III-V semiconductors; MOSFET; alumina; gallium arsenide; indium compounds; quantum well devices; Al2O3-InP; III-V material pathway; In1-xGaxAs; QW; frequency 245 GHz; frequency 355 GHz; generalized characterization; high mobility channel; high-frequency performance; low composite gate stack; optimized layer design; quantum-well MOSFET; record transconductance; size 100 nm; Aluminum oxide; Indium phosphide; Logic gates; MOSFET circuits; Resistance; Silicon; Transconductance;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242520
