Title :
Antimonide NMOSFET with source side injection velocity of 2.7×107 cm/s for low power high performance logic applications
Author :
Ali, A. ; Madan, H. ; Barth, M.J. ; Hollander, M.J. ; Boos, J.B. ; Bennett, B.R. ; Datta, S.
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
Antimonide (Sb) quantum well (QW) MOSFETs are demonstrated with integrated high-κ dielectric (1nmAl2O3-10nm HfO2). The long channel Sb NMOS exhibits effective electron mobility of 6,000 cm2/Vs at high field (2 × 1012 /cm2 of charge density (Ns)), which is the highest reported value for any III-V MOSFET. The short channel Sb NMOSFET (LG = 150nm) exhibits a cut-off frequency (fT) of 120GHz, fT - LG product of 18GHz.μm and source side injection velocity (veff) of 2.7×107 cm/s, at drain bias (VDS) of 0.75V and gate overdrive of 0.6V. The measured fT and fT × LG are 2 x higher, and veff is 4× higher than Si NMOS (1.0-1.2V VDD) at similar LG, and are the highest for any III-V MOSFET.
Keywords :
MOSFET; antimony compounds; electron mobility; low-power electronics; quantum well devices; antimonide NMOSFET; cut-off frequency; drain bias; electron mobility; gate overdrive; high-κ dielectric; low power high performance logic applications; quantum well MOSFET; source side injection velocity; voltage 0.75 V; Dielectrics; Frequency measurement; Logic gates; MOS devices; Pulse measurements; Silicon; Voltage measurement;
Conference_Titel :
VLSI Technology (VLSIT), 2012 Symposium on
Conference_Location :
Honolulu, HI
Print_ISBN :
978-1-4673-0846-5
Electronic_ISBN :
0743-1562
DOI :
10.1109/VLSIT.2012.6242521
