Title :
In Situ GaAs Substrate Preparation For III-V And Metal Overgrowth By Molecular Beam Epitaxy
Author :
Choquette, Kent D. ; Hong, M. ; Mannaerts, J.P. ; Freund, Robert S. ; Wetzel, R.C.
Author_Institution :
AT&T Bell Laboratories, Murray Hill NJ 07974
fDate :
29 Jul-2 Aug 1991
Keywords :
Annealing; Etching; Gallium arsenide; Gold; Hydrogen; III-V semiconductor materials; Molecular beam epitaxial growth; Plasma applications; Plasma materials processing; Substrates;
Conference_Titel :
Epitaxial Materials and In-Situ Processing for Optoelectronic Devices, 1991/Microfabrication for Photonics and Optoelectronics, 1991. LEOS 1991 Summer Topical Meetings on
Print_ISBN :
0-87942-618-7
DOI :
10.1109/LEOSST.1991.638947
