Title :
Cryogenically Cooled GaAs FET Amplifier with a 1.1-dB Noise Figure at 5.0 GHz
Abstract :
A 4.5 to 5.0 GHz gallium arsenide field-effect transistor (GaAs FET) amplifier cryogenically cooled to 20 K is described. A noise figure of 1.1 dB maximum is achieved over the band. Gain per stage is approximately 10 dB. A noise analysis is performed to predict noise figure dependence on the physical temperature of the amplifier.
Keywords :
Circuit noise; Gallium arsenide; Impedance; Microwave FETs; Noise figure; Noise generators; Performance analysis; Performance gain; Signal to noise ratio; Temperature;
Conference_Titel :
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location :
Cherry Hill, NJ, USA
DOI :
10.1109/MWSYM.1976.1123655
