Title :
X-Band MIC GaAs FET Power Amplifier
Author :
Tserng, H.Q. ; Sokolov, V. ; Macksey, H.M. ; Wisseman, W.R.
Abstract :
The microstrip circuit development of an X-band, one watt, 22 dB gain GaAs FET amplifier will be discussed. Microwave performance characteristics such as intermodulation, AM to PM conversion and noise figure will be presented.
Keywords :
Bandwidth; Frequency; Gallium arsenide; Impedance; Microstrip; Microwave FETs; Microwave amplifiers; Microwave integrated circuits; Power amplifiers; Power generation;
Conference_Titel :
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location :
Cherry Hill, NJ, USA
DOI :
10.1109/MWSYM.1976.1123658
