DocumentCode :
264537
Title :
Boundary conditions effect on states and transitions in a quantum-well — nanobridge — quantum dot structure
Author :
Goray, Leonid I. ; Racec, Paul N.
Author_Institution :
St. Petersburg Acad. Univ., St. Petersburg, Russia
fYear :
2014
fDate :
26-30 May 2014
Firstpage :
89
Lastpage :
95
Abstract :
We consider a varied-dimension InGaAs/GaAs structure of quantum well - nanobridge (NB) - quantum dot embedded in a "virtual" cylinder Ω. Electron and hole eigenstates are computed for the whole system using the finite volume method and effective mass approximation. Hybrid states and significant oscillator strength changes appear in the combined system at small values of the NB length under the Dirichlet boundary conditions imposed on the boundaries of Ω.
Keywords :
III-V semiconductors; effective mass; finite volume methods; gallium arsenide; indium compounds; oscillator strengths; semiconductor quantum dots; semiconductor quantum wells; Dirichlet boundary condition; InGaAs-GaAs; boundary condition effect; effective mass approximation; electron eigenstates; embedded quantum-well-nanobridge-quantum dot structure; finite volume method; hole eigenstates; hybrid states; oscillator strength; varied-dimension structure; virtual cylinder; Boundary conditions; Charge carrier processes; Eigenvalues and eigenfunctions; Indexes; Niobium; Oscillators; Quantum dots;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Days on Diffraction (DD), 2014
Conference_Location :
St. Petersburg
Print_ISBN :
978-1-4799-7331-6
Type :
conf
DOI :
10.1109/DD.2014.7036430
Filename :
7036430
Link To Document :
بازگشت