DocumentCode
2645542
Title
A numerically efficient semiconductor model with Fermi-Dirac thermalization dynamics (band-filling) for FDTD simulation of optoelectronic and photonic devices
Author
Huang, Y. ; Ho, S.T.
Author_Institution
Dept. of Electr. & Comput. Eng., Northwestern Univ., Evanston, IL, USA
Volume
1
fYear
2005
fDate
22-27 May 2005
Firstpage
253
Abstract
We describe a numerically efficient semiconductor model for FDTD simulation of optoelectronic and photonic devices that include the essential carrier dynamics such as band filling with Fermi-Dirac thermalization, spectral hole burning, and refractive index change.
Keywords
band structure; finite difference time-domain analysis; optical hole burning; optoelectronic devices; refractive index; semiconductor device models; FDTD simulation; Fermi-Dirac thermalization dynamics; band filling; carrier dynamics; optoelectronic devices; photonic devices; refractive index; semiconductor model; spectral hole burning; Analytical models; Computational modeling; Computer simulation; Energy states; Finite difference methods; Maxwell equations; Numerical models; Polarization; Thermal engineering; Time domain analysis;
fLanguage
English
Publisher
ieee
Conference_Titel
Quantum Electronics and Laser Science Conference, 2005. QELS '05
Print_ISBN
1-55752-796-2
Type
conf
DOI
10.1109/QELS.2005.1548744
Filename
1548744
Link To Document