Critical Temperature Switch: A Highly Sensitive Thermosensing Device Consisting of Subthreshold MOSFET Circuits

Author

Hagiwara, Atsushi ; Hirose, Tetsuya ; Asai, Tetsuya ; Amemiya, Yoshihito

Author_Institution

Dept. of Electr. Eng., Hokkaido Univ., Sapporo

fYear

2006

fDate

12-15 Dec. 2006

Firstpage

111

Lastpage

114

Abstract

A thermosensing circuit that changes its internal state steeply at a critical temperature is proposed. The device makes use of the transition of a MOSFET resistor from strong-inversion operation to weak-inversion or subthreshold operation. The temperature for the transition can be set to a desired value by adjusting the parameters of MOSFETs in the device. The device can be made with a standard CMOS process and can be used as over-temperature and over-current protectors for LSI circuits

Keywords

CMOS integrated circuits; field effect transistor switches; temperature sensors; CMOS process; LSI circuits; MOSFET resistor; critical temperature switch; highly sensitive thermosensing device; over-current protectors; over-temperature protectors; strong-inversion operation; subthreshold MOSFET circuits; weak-inversion operation; MOSFET circuits; Protection; Resistors; Switches; Switching circuits; Temperature measurement; Temperature sensors; Thermal resistance; Thermistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Intelligent Signal Processing and Communications, 2006. ISPACS '06. International Symposium on

Conference_Location

Yonago

Print_ISBN

0-7803-9732-0

Electronic_ISBN

0-7803-9733-9

Type

conf

DOI

10.1109/ISPACS.2006.364847

Filename

4212234