• DocumentCode
    2645821
  • Title

    Transferred Electron Logic Devices (TELDs) for Gigabit Rate Signal Processing

  • Author

    Upadhyayula, L.C. ; Smith, R.E. ; Wilhelm, J.F. ; Jolly, S.T. ; Paczkowski, J.P.

  • fYear
    1976
  • fDate
    14-16 June 1976
  • Firstpage
    164
  • Lastpage
    165
  • Abstract
    Planar GaAs transferred-electron logic devices (TELDs) have been fabricated and their performance studied. The devices are evaluated as threshold logic elements. The parameters studied are (1) switching characteristics, (2) shortest pulses that can be processed, and (3) device delay and dissipation. Pulses as small as 80 ps wide can be processed through transferred electron logic gates (TELGs) with device delays of the order of 50 ps and delay dissipation product of 5-10 pJ which makes it suitable for gigabit rate signal processing.
  • Keywords
    Anodes; Delay; Electrons; Fabrication; Gallium arsenide; Logic devices; Logic gates; Resistors; Schottky barriers; Signal processing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium, 1976 IEEE-MTT-S International
  • Conference_Location
    Cherry Hill, NJ, USA
  • Type

    conf

  • DOI
    10.1109/MWSYM.1976.1123681
  • Filename
    1123681