DocumentCode
2645821
Title
Transferred Electron Logic Devices (TELDs) for Gigabit Rate Signal Processing
Author
Upadhyayula, L.C. ; Smith, R.E. ; Wilhelm, J.F. ; Jolly, S.T. ; Paczkowski, J.P.
fYear
1976
fDate
14-16 June 1976
Firstpage
164
Lastpage
165
Abstract
Planar GaAs transferred-electron logic devices (TELDs) have been fabricated and their performance studied. The devices are evaluated as threshold logic elements. The parameters studied are (1) switching characteristics, (2) shortest pulses that can be processed, and (3) device delay and dissipation. Pulses as small as 80 ps wide can be processed through transferred electron logic gates (TELGs) with device delays of the order of 50 ps and delay dissipation product of 5-10 pJ which makes it suitable for gigabit rate signal processing.
Keywords
Anodes; Delay; Electrons; Fabrication; Gallium arsenide; Logic devices; Logic gates; Resistors; Schottky barriers; Signal processing;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium, 1976 IEEE-MTT-S International
Conference_Location
Cherry Hill, NJ, USA
Type
conf
DOI
10.1109/MWSYM.1976.1123681
Filename
1123681
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