Title :
Effects of base and emitter doping gradients on the electrical performance of heterojunction bipolar transistors
Author :
Ning, J.H. ; Yuan, J.S. ; Sinanan-Singh, Ramaward
Author_Institution :
Lucent Technol., Orlando, FL, USA
Abstract :
The analytical equations of heterojunction bipolar transistors with nonuniform doping in the base and emitter has been developed. The comparison of the device characteristics between nonuniform and uniform doped HBTs show that the nonuniform doped HBT has higher current gain, higher cutoff frequency, lower base transit time, and lower emitter-base junction capacitance
Keywords :
doping profiles; heterojunction bipolar transistors; semiconductor doping; HBT; base doping gradient; base transit time; current gain; cutoff frequency; electrical performance; emitter doping gradient; emitter-base junction capacitance; heterojunction bipolar transistor; nonuniform doping; Bipolar transistors; Capacitance; Cutoff frequency; Doping; Doping profiles; Electric potential; Equations; Heterojunction bipolar transistors; Performance analysis; Permittivity; Technological innovation;
Conference_Titel :
Southcon/96. Conference Record
Conference_Location :
Orlando, FL
Print_ISBN :
0-7803-3268-7
DOI :
10.1109/SOUTHC.1996.535097
