DocumentCode :
2646348
Title :
Design of a 570 MHz current feedback amplifier on bonded wafer technology
Author :
Jung, Taewon
Author_Institution :
Harris Semicond., Melbourne, FL, USA
fYear :
1996
fDate :
25-27 Jun 1996
Firstpage :
396
Lastpage :
399
Abstract :
The design of a monolithic, DC to 570 MHz, fast settling, low distortion current feedback amplifier is described. The circuit is fabricated in a complementary bipolar, bonded wafer silicon on insulator (SOI) technology
Keywords :
UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; electric distortion; feedback amplifiers; silicon-on-insulator; wafer bonding; wideband amplifiers; 570 MHz; Si; bonded wafer SOI technology; complementary bipolar process; current feedback amplifier; fast settling; low distortion; monolithic IC; Bandwidth; Capacitors; Circuits; Distortion; Feedback amplifiers; Frequency response; Impedance; Mirrors; Silicon on insulator technology; Topology; Voltage; Wafer bonding;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Southcon/96. Conference Record
Conference_Location :
Orlando, FL
ISSN :
1087-8785
Print_ISBN :
0-7803-3268-7
Type :
conf
DOI :
10.1109/SOUTHC.1996.535100
Filename :
535100
Link To Document :
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