DocumentCode
2646348
Title
Design of a 570 MHz current feedback amplifier on bonded wafer technology
Author
Jung, Taewon
Author_Institution
Harris Semicond., Melbourne, FL, USA
fYear
1996
fDate
25-27 Jun 1996
Firstpage
396
Lastpage
399
Abstract
The design of a monolithic, DC to 570 MHz, fast settling, low distortion current feedback amplifier is described. The circuit is fabricated in a complementary bipolar, bonded wafer silicon on insulator (SOI) technology
Keywords
UHF amplifiers; UHF integrated circuits; bipolar analogue integrated circuits; electric distortion; feedback amplifiers; silicon-on-insulator; wafer bonding; wideband amplifiers; 570 MHz; Si; bonded wafer SOI technology; complementary bipolar process; current feedback amplifier; fast settling; low distortion; monolithic IC; Bandwidth; Capacitors; Circuits; Distortion; Feedback amplifiers; Frequency response; Impedance; Mirrors; Silicon on insulator technology; Topology; Voltage; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Southcon/96. Conference Record
Conference_Location
Orlando, FL
ISSN
1087-8785
Print_ISBN
0-7803-3268-7
Type
conf
DOI
10.1109/SOUTHC.1996.535100
Filename
535100
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