Title :
Band to band tunneling in heterojunctions: Semi-classical versus quantum computation
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Technol. Madras, Chennai, India
Abstract :
Band-to-band tunneling (BTBT) determines the on-current in tunnel FETs (TFETs). There is a need to review and recalibrate BTBT models used in TCAD tools, which were developed when BTBT was essentially a leakage phenomenon. Here, we consider the process of BTBT through staggered heterojunctions which find application in the design of TFETs having high on-currents. We use a simple 1-D system and compare the estimates of BTBT computed with a semi-classical WKB approach and that obtained from a solution of Schrödinger´s equation by a wavefunction matching procedure. We show that the WKB method significantly overestimates the tunneling current through heterojunctions.
Keywords :
Schrodinger equation; field effect transistors; semiconductor device models; tunnelling; 1D system; BTBT models; Schrodinger equation; TCAD tools; TFET; band to band tunneling; leakage phenomenon; quantum computation; semiclassical WKB approach; staggered heterojunctions; tunnel field effect transistors; tunneling current; wavefunction matching procedure; Computational modeling; FETs; Heterojunctions; Materials; P-n junctions; Photonic band gap; Tunneling; Band-to-band tunneling; NEGF; WKB; complex bandstructure; heterojunctions;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242819