Title :
Electro-thermo-mechanical simulation of AlGaN/GaN HEMTs
Author :
Maur, M. Auf der ; Romano, G. ; Carlo, A. Di
Author_Institution :
Dept. of Electron. Eng., Univ. of Rome Tor Vergata, Rome, Italy
Abstract :
A fully selfconsistent, coupled electro-thermo-mechanical model for nitride-based devices is presented and applied to a high-power AlGaN/GaN High Electron Mobility Transistor (HEMT). The influence of converse piezoelectric effect, thermal stress and of the selfconsistent coupling on the static device characteristics and on the stress distribution in the device is studied.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; piezoelectricity; stress analysis; wide band gap semiconductors; AlGaN-GaN; HEMT; converse piezoelectric effect; coupled electrothermomechanical model; electrothermomechanical simulation; high-power high electron mobility transistor; nitride-based devices; selfconsistent coupling; static device characteristics; stress distribution; thermal stress; Aluminum gallium nitride; Gallium nitride; HEMTs; MODFETs; Mathematical model; Strain; Stress;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242824
