Electron drift velocity and mobility calculation in bulk silicon using an analytical model for the phonon dispersions

Author

Gada, M.L. ; Vasileska, D. ; Goodnick, S.M. ; Raleva, K.

Author_Institution

Sch. of Electr., Arizona State Univ., Tempe, AZ, USA

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

We present simulation results for the drift velocity and mobility in silicon at various temperatures using analytical model which incorporates analytical expressions for the acoustic and optical phonon dispersions. Our simulation results for the field-dependent average drift velocity and mobility are in excellent agreement with the results that utilize the rejection technique and the experimental data for silicon for [100] crystallographic direction at different temperatures.

Keywords

acoustic dispersion; electron mobility; elemental semiconductors; optical dispersion; phonon dispersion relations; silicon; Si; [100] crystallographic direction; acoustic phonon dispersions; analytical model; bulk silicon; drift mobility calculation; electron drift velocity; field-dependent average drift velocity; optical phonon dispersions; rejection technique; Acoustics; Analytical models; Electron mobility; Optical scattering; Phonons; Silicon; bulk Monte Carlo method; phonon dispersion; silicon electron drift velocity; silicon electron mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242831

Filename

6242831