DocumentCode
2646693
Title
Photon absorption in regimented quantum dot arrays
Author
Rodríguez, A. Luque ; Rodríguez-Bolívar, S. ; Gómez-Campos, F.M.
Author_Institution
Dept. de Electron. y Tecnol. de los Comput. Fac. de Cienc., Univ. de Granada, Granada, Spain
fYear
2012
fDate
22-25 May 2012
Firstpage
1
Lastpage
4
Abstract
A study of the intraband absorption coefficient in cuboid InAs quantum dot periodic nanostructures embedded in GaAs is presented. The miniband structure of electron states in the conduction band is related to the shape of the quantum dots. The effect of strain is also taken into account in the simulations through a previous 8×8 k·p calculation. We analyze the influence on the absorption coefficient on the miniband structure of the systems.
Keywords
III-V semiconductors; absorption coefficients; gallium arsenide; indium compounds; quantum computing; semiconductor quantum dots; InAs; conduction band; cuboid quantum dot periodic nanostructures; electron states; intraband absorption coefficient; miniband structure; photon absorption; regimented quantum dot arrays; Absorption; Gallium arsenide; Nanostructures; Optical polarization; Photonics; Quantum dots; Shape; 3D superlattices; Quantum dots; optical absorption;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location
Madison, WI
Print_ISBN
978-1-4673-0705-5
Type
conf
DOI
10.1109/IWCE.2012.6242833
Filename
6242833
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