DocumentCode
2646707
Title
Scattering in GaAs for Fermi kinetics transport
Author
Grupen, Matt
Author_Institution
Air Force Res. Lab., Wright-Patterson AFB, OH, USA
fYear
2012
fDate
22-25 May 2012
Firstpage
1
Lastpage
4
Abstract
Progress on a Fermi kinetics hot electron transport model, a numerically efficient approach based on ideal Fermi gas thermodynamics, is reported. The basics of the model are first reviewed, and then methods for incorporating ionized impurity, acoustic phonon, and long range electron-electron scattering are described. The different roles the various scattering mechanisms serve within the model and their effects on simulation results are also presented.
Keywords
III-V semiconductors; electron transport theory; electron-electron interactions; fermion systems; gallium arsenide; wide band gap semiconductors; Fermi gas thermodynamics; Fermi kinetics hot electron transport model; GaAs; acoustic phonon; electron-electron scattering; Acoustics; Gallium arsenide; Kinetic theory; Optical scattering; Phonons; Plasmons;
fLanguage
English
Publisher
ieee
Conference_Titel
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location
Madison, WI
Print_ISBN
978-1-4673-0705-5
Type
conf
DOI
10.1109/IWCE.2012.6242834
Filename
6242834
Link To Document