• DocumentCode
    2646707
  • Title

    Scattering in GaAs for Fermi kinetics transport

  • Author

    Grupen, Matt

  • Author_Institution
    Air Force Res. Lab., Wright-Patterson AFB, OH, USA
  • fYear
    2012
  • fDate
    22-25 May 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Progress on a Fermi kinetics hot electron transport model, a numerically efficient approach based on ideal Fermi gas thermodynamics, is reported. The basics of the model are first reviewed, and then methods for incorporating ionized impurity, acoustic phonon, and long range electron-electron scattering are described. The different roles the various scattering mechanisms serve within the model and their effects on simulation results are also presented.
  • Keywords
    III-V semiconductors; electron transport theory; electron-electron interactions; fermion systems; gallium arsenide; wide band gap semiconductors; Fermi gas thermodynamics; Fermi kinetics hot electron transport model; GaAs; acoustic phonon; electron-electron scattering; Acoustics; Gallium arsenide; Kinetic theory; Optical scattering; Phonons; Plasmons;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Computational Electronics (IWCE), 2012 15th International Workshop on
  • Conference_Location
    Madison, WI
  • Print_ISBN
    978-1-4673-0705-5
  • Type

    conf

  • DOI
    10.1109/IWCE.2012.6242834
  • Filename
    6242834