Performance of silicon carbide devices in power converters

Author

Trivedi, Malay ; Shenai, Krishna

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA

fYear

2000

fDate

2000

Firstpage

17

Lastpage

20

Abstract

This paper describes the characterization of the performance of a 100 V/1 A SiC p-n diode and a 50 V/0.5 A SiC JFET in a DC-DC buck converter. A fundamental study of material defects and process techniques in SiC is needed for significant material purification. The nonidealities of device operation are clearly indicated, and the impact on buck converter operation is described. Improved device design and fabrication techniques are required for further improvement in device performance

Keywords

DC-DC power convertors; junction gate field effect transistors; power field effect transistors; power semiconductor diodes; semiconductor device measurement; silicon compounds; wide band gap semiconductors; 0.5 A; 1 A; 100 V; 50 V; DC-DC buck converter; SiC; SiC JFET; SiC material purification; SiC p-n diode; buck converter operation; device design techniques; device fabrication techniques; device operation nonidealities; device performance; material defects; power converters; process techniques; silicon carbide devices; DC-DC power converters; Degradation; Diodes; Fasteners; MOSFETs; Power electronics; Silicon carbide; Switches; Switching converters; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Integrated Power Packaging, 2000. IWIPP 2000. International Workshop on

Conference_Location

Waltham, MA

Print_ISBN

0-7803-6437-6

Type

conf

DOI

10.1109/IWIPP.2000.885172

Filename

885172