Title :
MTJs with a composite free layer for high-speed spin transfer torque RAM: Micromagnetic simulations
Author :
Makarov, Alexander ; Sverdlov, Viktor ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We demonstrate a substantial decrease of the switching time in penta-layer MTJs with a composite free layer regardless of the size and aspect ratio of the MTJ. The composite magnetic layer consists of two half-ellipses separated by a non-magnetic spacer. We analyze the peculiarities of the magnetic dynamics of these MTJs and reveal the physical reason for the decrease of the switching time. The scaling potential based on an analysis of the thermal stability is discussed. Furthermore, we outline the method for increasing the thermal.
Keywords :
MRAM devices; magnetic tunnelling; magnetoelectronics; micromagnetics; thermal analysis; thermal stability; aspect ratio; composite free layer; composite magnetic layer; high-speed spin transfer torque RAM; magnetic dynamics; magnetic tunnel junction; micromagnetic simulations; nonmagnetic spacer; penta-layer MTJ; thermal stability analysis; Junctions; Magnetic tunneling; Magnetization; Perpendicular magnetic anisotropy; Stability analysis; Switches; Thermal stability; MTJ; STT-MRAM; composite free layer; micromagnetic modeling;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242842