Electron drift velocity and mobility calculation in bulk Si using an analytical model for the phonon dispersion

Author

Gada, M.L. ; Vasileska, D. ; Goodnick, S.M. ; Raleva, K.

Author_Institution

Sch. of Electr., Comput. & Energy Eng., Arizona State Univ., Tempe, AZ, USA

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

We present simulation results for the drift velocity and mobility in silicon at various temperatures using analytical model which incorporates analytical expressions for the acoustic and optical phonon dispersions. Our simulation results for the field-dependent average drift velocity and mobility are in excellent agreement with the results that utilize the rejection technique and the experimental data for silicon for [100] crystallographic direction at different temperatures.

Keywords

Monte Carlo methods; electron mobility; elemental semiconductors; phonon dispersion relations; silicon; Monte Carlo method; Si; acoustic phonon Dispersion; analytical model; bulk silicon; crystallographic direction; electron drift mobility; electron drift velocity; field dependence; optical phonon dispersion; rejection method; Acoustics; Analytical models; Dispersion; Electron mobility; Optical scattering; Phonons; Silicon; bulk Monte Carlo method; phonon dispersion; silicon electron drift velocity; silicon electron mobility;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242843

Filename

6242843