Exchange-correlation effects in ballistic and dissipative transport in GAA Si nanowire transistors

Author

Martinez, A. ; Aldegunde, M. ; Kalna, K. ; Barker, J.R.

Author_Institution

Coll. of Eng., Swansea Univ., Swansea, UK

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

The impact of exchange and correlation (XC) in the current voltage characteristic of a gate-all-around Si nanowire transistor has been thoroughly investigated in the context of ballistic and dissipative transport. The electron transport is described using the Non Equilibrium Green Function formalism (NEGF). The XC potential is evaluated in the local density approximation. Transfer characteristics for devices with cross-section of 2.2×2.2 nm² and 3.6×3.6 nm² have been calculated. The calculation shows that the impact of the XC is larger for the small cross-section, producing an enhancement in the on current of close to 50%. This enhancement is gate bias dependent and has a maximum of a few hundred millivolts after the threshold voltage. The impact of the XC in the on current is comparable to the impact of scattering for the small cross-section but it is smaller at the larger cross section.

Keywords

Green´s function methods; ballistic transport; elemental semiconductors; field effect transistors; nanoelectronics; nanowires; silicon; GAA nanowire transistors; NEGF; Si; XC potential; ballistic transport; current voltage characteristic; dissipative transport; electron transport; exchange-correlation effects; exchange-correlation potential; gate bias dependent; gate-all-around nanowire transistor; local density approximation; nonequilibrium Green function formalism; silicon nanowire field effect transistors; transfer characteristics; Approximation methods; Green function; Logic gates; Phonons; Scattering; Silicon; Transistors; Effective mass approximation; Exchange and Correlation; Non Equillibrium Green Function formalism; Silicon Nanowire field effect transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242845

Filename

6242845