Reduction of surface roughness induced spin relaxation in SOI MOSFETs

Author

Osintsev, D. ; Baumgartner, O. ; Stanojevic, Z. ; Sverdlov, V. ; Selberherr, S.

Author_Institution

Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria

fYear

2012

fDate

22-25 May 2012

Firstpage

1

Lastpage

4

Abstract

Silicon is the main element of modern charge-based electronics. Understanding the details of the spin propagation in silicon structures is elementary for novel spin-based device applications. We investigate valley splitting, surface roughness scattering, and spin relaxation matrix elements in thin silicon films by using a perturbative k·p approach. We demonstrated that applying uniaxial stress along the [110] direction considerably suppresses the intersubband spin relaxation elements.

Keywords

MOSFET; magnetoelectronics; matrix algebra; silicon-on-insulator; surface roughness; SOI MOSFET; Si; charge-based electronics; intersubband spin relaxation element suppression; perturbative k·p approach; silicon structures; spin propagation; spin relaxation matrix elements; spin-based device; surface roughness induced spin relaxation reduction; surface roughness scattering; uniaxial stress; MOSFETs; Microelectronics; Rough surfaces; Scattering; Silicon; Strain; Surface roughness;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Electronics (IWCE), 2012 15th International Workshop on

Conference_Location

Madison, WI

Print_ISBN

978-1-4673-0705-5

Type

conf

DOI

10.1109/IWCE.2012.6242850

Filename

6242850