Title :
Self-heating and current degradation in 25 nm FD SOI devices with (100) and (110) crystallographic orientation
Author :
Raleva, K. ; Vasileska, D. ; Goodnick, S.M.
Author_Institution :
Fac. of Electr. Eng. & Inf. Technol., “Ss. Cyril & Methodius” Univ., Skopje, Macedonia
Abstract :
In this paper we present simulation results obtained with our electro-thermal particle-based device simulator for 25 nm fully depleted silicon-on-insulator devices with (100) and (110) crystallographic orientations. We also investigate the importance of the proper choice of the thermal conductivity model (which is particularly important for thin silicon films) in properly predicting the average maximum temperature and the maximum temperature in the hot spot which are important parameters regarding device reliability.
Keywords :
crystallography; semiconductor device reliability; silicon-on-insulator; thermal conductivity; FD SOI devices; crystallographic orientation; current degradation; device reliability; electrothermal particle-based device simulator; fully depleted silicon-on-insulator devices; self-heating degradation; size 25 nm; thermal conductivity model; thin silicon films; Conductivity; Degradation; Semiconductor device modeling; Silicon; Temperature dependence; Thermal conductivity; Thermal degradation; Silicon-On-Insulator devices; crystallographic orientations; electro-thermal particle based device simulation; thermal conductivity;
Conference_Titel :
Computational Electronics (IWCE), 2012 15th International Workshop on
Conference_Location :
Madison, WI
Print_ISBN :
978-1-4673-0705-5
DOI :
10.1109/IWCE.2012.6242855
